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Price DescriptionSpecificationPrice RangeAvg.ChangeDate
P-MOS 6 Inch N-type SiC Subtrate(CNY/Piece)4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.016~0.024ohm·cm LTV≤2μm(10mm*10mm) TTV≤5μm Bow -15μm~15μm Warp≤20μm Micropipe density<0.15ea/cm23000~42003600-200Oct 11
P-SBD 6 Inch N-type SiC Subtrate(CNY/Piece)4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.015~0.025 ohm·cm LTV≤3μm(5mm*5mm) TTV≤6μm Bow -25~25μm Warp≤35μm Micropipe density<5ea/cm22000~30002500-100Oct 11
D level 6 Inch N-type SiC Subtrate(CNY/Piece)4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.015~0.028 ohm·cm LTV≤10μm(5mm*5mm) TTV≤15μm Bow-45~45μm Warp≤60μm Micropipe density<15ea/cm2800~150011500Oct 11
P-MOS 8 Inch N-type SiC Subtrate(CNY/Piece)4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.016~0.024ohm·cm LTV≤3μm(10mm*10mm) TTV≤7μm Bow -20μm~20μm Warp≤30μm 11000~12000115000Oct 11
P-SBD 8 Inch N-type SiC Subtrate(CNY/Piece)4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.015~0.025 ohm·cm LTV≤5μm(10mm*10mm) TTV≤10μm Bow -25~25μm Warp≤35μm8500~1000092500Oct 11
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