P-MOS 6 Inch N-type SiC Subtrate(CNY/Piece) | 4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.016~0.024ohm·cm LTV≤2μm(10mm*10mm) TTV≤5μm Bow -15μm~15μm Warp≤20μm Micropipe density<0.15ea/cm2 | 3000~4200 | 3600 | -200 | Oct 11 |
P-SBD 6 Inch N-type SiC Subtrate(CNY/Piece) | 4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.015~0.025 ohm·cm LTV≤3μm(5mm*5mm) TTV≤6μm Bow -25~25μm Warp≤35μm Micropipe density<5ea/cm2 | 2000~3000 | 2500 | -100 | Oct 11 |
D level 6 Inch N-type SiC Subtrate(CNY/Piece) | 4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.015~0.028 ohm·cm LTV≤10μm(5mm*5mm) TTV≤15μm Bow-45~45μm Warp≤60μm Micropipe density<15ea/cm2 | 800~1500 | 1150 | 0 | Oct 11 |
P-MOS 8 Inch N-type SiC Subtrate(CNY/Piece) | 4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.016~0.024ohm·cm LTV≤3μm(10mm*10mm) TTV≤7μm Bow -20μm~20μm Warp≤30μm | 11000~12000 | 11500 | 0 | Oct 11 |
P-SBD 8 Inch N-type SiC Subtrate(CNY/Piece) | 4H n-type Nitrogen 4°toward<11-20>±0.15º Resistivity 0.015~0.025 ohm·cm LTV≤5μm(10mm*10mm) TTV≤10μm Bow -25~25μm Warp≤35μm | 8500~10000 | 9250 | 0 | Oct 11 |